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symbol parameter max. units v ds drain-source voltage 80 v v gs gate-to-source voltage 20 i d @ t a = 25c continuous drain current, v gs @ 10v 6.3 i d @ t a = 70c continuous drain current, v gs @ 10v 5.0 a i dm pulsed drain current 50 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 linear derating factor 20 mw/c t j operating junction and -55 to + 150 c t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) www.irf.com 1 symbol parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 c/w thermal resistance so-8 top view 8 12 3 4 5 6 7 d d d d g s a s s a irf7488pbf hexfet power mosfet v dss r ds(on) max q g 80v 29m @v gs =10v 38nc notes through are on page 9 absolute maximum ratings high frequency dc-dc converters lead-free benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current downloaded from: http:///
irf7488pbf 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 9.3 CCC CCC s v ds = 15v, i d = 3.8a q g total gate charge CCC 38 57 i d = 3.8a q gs gate-to-source charge CCC 9.1 nc v ds = 40v q gd gate-to-drain ("miller") charge CCC 12 v gs = 10v, t d(on) turn-on delay time CCC 13 CCC v dd = 40v t r rise time CCC 12 CCC i d = 3.8a t d(off) turn-off delay time CCC 44 CCC r g = 9.1 ? t f fall time CCC 16 CCC v gs = 10v c iss input capacitance CCC 1680 CCC v gs = 0v c oss output capacitance CCC 270 CCC v ds = 25v c rss reverse transfer capacitance CCC 32 CCC pf ? = 1.0mhz c oss output capacitance CCC 1760 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 170 CCC v gs = 0v, v ds = 64v, ? = 1.0mhz c oss eff. effective output capacitance CCC 340 CCC v gs = 0v, v ds = 0v to 64v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy CCC 96 mj i ar avalanche current CCC 3.8 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 3.8a, v gs = 0v t rr reverse recovery time CCC 65 98 ns t j = 25c, i f = 3.8a q rr reverse recoverycharge CCC 190 290 nc di/dt = 100a/s diode characteristics 2.3 50 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 80 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.089 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 24 29 m ? v gs = 10v, i d = 3.8a v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 80v, v gs = 0v CCC CCC 250 v ds = 64v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 20v gate-to-source reverse leakage CCC CCC -200 na v gs = -20v i gss i dss drain-to-source leakage current downloaded from: http:///
irf7488pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 001 0. 01 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.0v 20s pulse width tj = 25c 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.0v 20s pulse width tj = 150c 4. 0 5. 0 6. 0 7. 0 v gs , gate-to-source voltage (v) 0. 01 0. 10 1. 00 10. 00 100. 00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20s pulse width
-60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0. 5 1. 0 1. 5 2. 0 2. 5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 6.3a v gs = 10v
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irf7488pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) cos s crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 02 03 04 05 06 0 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v vds= 40v vds= 16v i d = 3.8a 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///
irf7488pbf www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 ! 0.1 %

+ - fig 9. maximum drain current vs. ambient temperature 1e-005 0. 0001 0. 001 0. 01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0. 01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 7 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
irf7488pbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.7a 3.0a bottom 3.8a 0 20 40 60 80 i d , drain current (a) 0.022 0.024 0.026 0.028 0.030 0.032 0.034 0.036 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs= 10v 4.0 8.0 12.0 16.0 v gs, gate -to -source voltage (v) 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.8a downloaded from: http:///
irf7488pbf www.irf.com 7 fig 16.

for n-channel hexfet power mosfets "!# " $! $ ? # %!&$$ ? ! $$ ? # %#'(&$$ "!!$!$) !*! p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -
? +, $! -. ? !+!*/ 0 ? & $! - !11 ? 0 2+0$! fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr downloaded from: http:///
irf7488pbf 8 www.irf.com so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mil l ime t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code downloaded from: http:///
irf7488pbf www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 13mh r g = 25 ? , i as = 3.8a. pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04 downloaded from: http:///

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